Published July 1993 | Version v1
Journal article Metadata-only

Radiation action of deuterons on radiation detectors of high-resistance silicon

Creators

  • 1. AN SSSR, Leningrad (Russian Federation). Fiziko-Tekhnicheskij Inst.

Description

Are investigated the radiation defects, appeared after deuteron irradiation in radiation detectors on the base of high-resistance n-Si. Comparison of results of deuteron and α-particle irradiations is carried out. A possibility is shown of decreasing the back currents of irradiated detectors when annealing. A possibility is discussed of explanation of observed effects by means of representations on multicomponent composite complexes

Additional details

Additional titles

Original title (Russian)
Радиационное воздействие дейтронов на приемники излучения из высокоомного кремния

Publishing Information

Journal Title
Fizika i Tekhnika Poluprovodnikov
Journal Volume
27
Journal Issue
7
Journal Page Range
p. 1113-1120.
ISSN
0015-3222
CODEN
FTPPA4

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
25022995
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
ALPHA PARTICLES; ANNEALING; DEUTERON BEAMS; FRENKEL DEFECTS; KEV RANGE 100-1000; N-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; SI SEMICONDUCTOR DETECTORS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K
Descriptors DEC
BEAMS; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ENERGY RANGE; HEAT TREATMENTS; HELIUM IONS; ION BEAMS; IONIZING RADIATIONS; IONS; KEV RANGE; MATERIALS; MEASURING INSTRUMENTS; POINT DEFECTS; RADIATION DETECTORS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE; VACANCIES