Published January 1979
| Version v1
Journal article
μSR research in semiconductors
Creators
- 1. Simon Fraser Univ., Burnaby, British Columbia (Canada). Dept. of Physics
Description
Muon and muonium states in semiconductors especially silicon and germanium, have been the subject of μSR research from the birth of the μSR technique until the present. They are now under active investigation at at least three laboratories. Three different electronic states of the muon impurity have been firmly identified in silicon and more tentatively in germanium. This research has produced a significant amount of published literature which, due to the span of time and distance between the various experiments, shows large differences in technique, emphasis and style. The author attempts to present a coherent view of this literature distinguishing the well-understood effects from those not understood. (Auth.)
Additional details
Publishing Information
- Journal Title
- Hyperfine Interactions
- Journal Volume
- 6
- Journal Issue
- 1-4
- Series
- Hyperfine Interactions.
- Journal Page Range
- 155-161
- ISSN
- 0304-3843
Conference
- Title
- 1. international topical meeting on muon spin rotation.
- Dates
- 4 - 7 Sep 1978.
- Place
- Rorschach, Switzerland.
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 10474864
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTAL DOPING; ELECTRONIC STRUCTURE; GERMANIUM; HYPERFINE STRUCTURE; INTERSTITIALS; MUON PROBES; MUONIUM; SEMICONDUCTOR MATERIALS; SILICON; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; METALS; POINT DEFECTS; PROBES; SEMIMETALS