Published September 12, 2007 | Version v1
Journal article

The computational materials design of (Ga, Cr)N: effects of co-doping on exchange interactions

  • 1. Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

Description

We investigate the effect of O or Be co-doping on the exchange interaction between Cr spins in (Ga, Cr)N by means of first-principles calculations based on the density-functional theory. The ferromagnetic exchange interactions are reduced by doping Be around Cr. On the other hand, O doping reduces the ferromagnetic interaction remarkably only for the case of Cr-O-Cr complex formation. The enhancement of the ferromagnetic exchange interaction cannot be achieved by doping O or Be impurities. However, the O and Be impurities can help the clustering of Cr atoms due to the enhancement of the attractive interaction between Cr atoms

Additional details

Identifiers

DOI
10.1088/0953-8984/19/36/365238;
PII
S0953-8984(07)38909-1;

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
19
Journal Issue
36
Journal Page Range
p. 365238
ISSN
0953-8984
CODEN
JCOMEL

Conference

Title
International conference on quantum simulators and design
Dates
3-6 Dec 2006
Place
Hiroshima (Japan)