Published August 1987
| Version v1
Journal article
Thermal spike formation in InP
Description
In this work it is shown that the anomalously high defect generation, detected in InP bombarded with heavy ions, can be explained, at least in a qualitative manner, on the basis of thermal spike formation. (author)
Additional details
Publishing Information
- Journal Title
- Radiat. Eff. Express
- Journal Volume
- 1
- Journal Issue
- 2
- Series
- Radiat. Eff. Express.
- Journal Page Range
- 69-72
- ISSN
- 0888-7322
- CODEN
- REFEE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 19010188
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- BISMUTH IONS; CRYSTAL DEFECTS; INDIUM PHOSPHIDES; ION IMPLANTATION; MATHEMATICAL MODELS; MONTE CARLO METHOD; PHYSICAL RADIATION EFFECTS; SELENIUM IONS; SILICON IONS; THERMAL SPIKES
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; CRYSTAL STRUCTURE; INDIUM COMPOUNDS; IONS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; RADIATION EFFECTS