Published March 29, 2012
| Version v1
Journal article
Auger analysis of high-dose ion-implantation of arsenic in silicon
Creators
- 1. Acad. J. Malinowski Institute of Optical Materials and Technologies, Bulgarian Academy of Sciences, 109 Acad. G. Bonchev Str., 1113 Sofia (Bulgaria)
Description
The paper deals with Auger electron spectroscopy (AES) analysis of high-dose ion-implantation of arsenic in silicon. Six profile distributions are obtained with doses covering uniformly the range 2×1016 - 2×1017 atoms/cm2. The peak from the matrix (Si) is only monitored; it is assumed that the alteration in its intensity is due to the other element of the binary composition (As). This method of quantification is applicable to ion implantation. The profile depth is calibrated by Rutherford backscattering spectroscopy (RBS). The Ar ion (3 keV) sputtering rate depends weakly on the dose.
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/356/1/012004Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 356
- Journal Issue
- 1
- Journal Page Range
- [5 p.]
- ISSN
- 1742-6596
Conference
- Title
- 17. international summer school on vacuum, electron, and ion technologies
- Acronym
- VEIT 2011
- Dates
- 19-23 Sep 2011
- Place
- Sunny Beach (Bulgaria)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43104800
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ARGON IONS; ARSENIC; AUGER ELECTRON SPECTROSCOPY; ION IMPLANTATION; KEV RANGE; MATRIX MATERIALS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SPATIAL DISTRIBUTION; SPUTTERING
- Descriptors DEC
- CHARGED PARTICLES; DISTRIBUTION; ELECTRON SPECTROSCOPY; ELEMENTS; ENERGY RANGE; IONS; MATERIALS; SEMIMETALS; SPECTROSCOPY