Electrical isolation of n- and p-In0.53Ga0.47As epilayers using ion irradiation

A study of the evolution of sheet resistance of p- and n-type In0.53Ga0.47As epilayers during O, C, Li, and H irradiation was conducted. The threshold dose at which the material becomes highly resistive increased upon decreasing the mass of the implanted ion, was higher for n-InGaAs as compared to p-InGaAs and was greater for samples with a higher initial free carrier concentration. Implantation with H+ yielded isolation behavior that was different from that for implantation with the three medium-mass ions. The thermal stability of defects induced by implantation was also investigated by cumulative annealing, and was found to be slightly higher in n-InGaAs as compared to p-InGaAs. Shallow donor production in the InGaAs epilayer during implantation played a crucial role in determining the electrical characteristics of the samples