P-n junctions on the basis of cadmium tellurides

The work is dedicated to the study of p-n junctions on the basis of cadmium telluride. For the production of p-n junctions n-CoFe monocrystals grown by the Bridgman method, are used. The barrier is made by the alloying method: the n-p junction on the basis of electron cadmium telluride by solution and recrystallization in bismuth. The volt-ampere characteristics at 300 K are measured. The structures with high density of direct current are created on the low-resistance basis by the described method