The behaviour of boron molecular ion implants into silicon

Implants of boron molecular ions into silicon have been studied using a variety of experimental techniques, but with emphasis on sheet resistance annealing characteristics and transmission electron microscopy. Boron halide compound molecules have been implanted and equivalent dose sequential implants of atomic species used as control conditions. The implants studied were B+, BCl2+, BCl+, Cl+ + B+, BF2+, and B+ + F+ at 25 keV/B atom and B+, BBr2+ and Br2+ + B+ at 12 keV/B atom. The implantation of molecular ions enables conditions of varying damage to be studied with constant dose, dose rate and energy of the dopant species. In addition to damage effects the halogen atoms produce species effects in the implanted zone. The escape of the halogen atoms has been measured as a function of the annealing temperature. The significant differences which exist between the behaviour of silicon implanted with these various conditions are considered with reference to the damage structure observed by transmission electron microscopy. The boron-fluorine molecular implants are shown to offer some advantages as a means of implanting boron. (author)