Published December 2011
| Version v1
Journal article
Movement of the boundary of a p-n junction in GaAs:Si under gyrotronic irradiation
Creators
- 1. National University of Life and Environment Sciences of Ukraine (Ukraine)
- 2. Berdyansk State Pedagogical University (Ukraine)
Description
It is shown that, by using a gyratron, it is possible to control the position of a p-n junction in an already fabricated light-emitting structure. A shift of the compensated region in the emitting structure based on GaAs:Si is caused by the motion of impurities in the field of thermoelastic stresses appearing in the course of sample cooling after gyrotronic irradiation.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 45
- Journal Issue
- 12
- Journal Page Range
- p. 1571-1574
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43094790
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CONTROL; COOLING; GALLIUM ARSENIDES; IMPURITIES; IRRADIATION; P-N JUNCTIONS; STRESSES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; PNICTIDES; SEMICONDUCTOR JUNCTIONS
Optional Information
- Copyright
- Copyright (c) 2011 Pleiades Publishing, Ltd.