Published 2011 | Version v1
Journal article Metadata-only

Current Sensitivity and Efficiency of a CdO-pCdTe-Mo Structure at Low Light Levels

Creators

  • 1. AS RU, Physical-technical institute, SPA 'Physics-Sun', Tashkent (Uzbekistan)
  • 2. Kara-Kalpak State University, Nukus (Uzbekistan)

Description

It is shown that the CdO-pCdTe-Mo structure established on the basis of large-block p-type films has a spectral range of photosensitivity of Δλ = 480-830 nm, which fully covers the visible area of solar radiation. It was found that the CdO-pCdTe-Mo structure has a high integral sensitivity of Sint = 430-520 mA/lm and a high efficiency of illumination by light of E = 10-100 lx. The anomalous behavior of Sint and the efficiency of this structure are explained by an increase in the photocurrent due to redistribution of the potential between the barrier and the series resistance of the structure as a result of illumination. (authors)

Additional details

Additional titles

Original title (Russian)
Токовая чувствительност' и KPD CdO-pCdTe-Мо-структуры при малом уровне освещенности

Publishing Information

Journal Title
Geliotekhnika
Journal Issue
no.3
Journal Page Range
p. 86-92
ISSN
0130-0997

INIS

Country of Publication
Uzbekistan
Country of Input or Organization
Uzbekistan
INIS RN
44127937
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CADMIUM OXIDES; CADMIUM TELLURIDES; CURRENTS; DIFFUSION BARRIERS; EFFICIENCY; FILMS; ILLUMINANCE; MOLYBDENUM; PHOTOSENSITIVITY; POTENTIALS; P-TYPE CONDUCTORS; SENSITIVITY; SOLAR RADIATION; VENTILATION BARRIERS
Descriptors DEC
CADMIUM COMPOUNDS; CHALCOGENIDES; ELEMENTS; ENGINEERED SAFETY SYSTEMS; MATERIALS; METALS; OXIDES; OXYGEN COMPOUNDS; RADIATIONS; REFRACTORY METALS; SEMICONDUCTOR MATERIALS; SENSITIVITY; STELLAR RADIATION; TELLURIDES; TELLURIUM COMPOUNDS; TRANSITION ELEMENTS

Optional Information

Notes
10 refs., 5 figs., 3 tabs.