Published June 2003 | Version v1
Journal article Metadata-only

Obtaining, studying and applying the InSb alloyed microcrystals for radiation resistant sensors

Creators

  • 1. Solid State Physics Dept., National Research Centre, Cairo (Egypt)
  • 2. Magnetic Sensor Lab., Lviv Polytechnic National Univ., L'vov (Ukraine)
  • 3. Lab. R-J.A.-Levesque, Montreal Univ., Montreal (Canada)

Description

Electrophysical properties and radiation resistance of InSb microcrystals prepared from gaseous phase are studied, the results are presented. Influence of different alloying impurities of Sn, Al and Cr on the microcrystal parameters and their resistance in terms of high-energy neutron radiation are considered. Application of the microcrystals prepared in magnetic field sensors and magnetic measuring systems fro operating conditions under radiation is reported

Abstract (Russian)

Приведены результаты исследований электрофизических свойств и радиационной стойкости микрокристаллов InSb, полученных из газовой фазы. Рассмотрено влияние различных легирующих примесей Sn, Al и Cr на параметры микрокристаллов и устойчивость их к высокоэнергетическому нейтронному облучению. Сообщается об использовании полученных микрокристаллов в сенсорах магнитного поля и магнитоизмерительных системах для радиационных условий эксплуатации

Additional details

Additional titles

Original title (Russian)
Получение, исследование и применение легированных микрокристаллов антимонида индия для радиационно стойких сенсоров

Publishing Information

Journal Title
Izvestiya Vysshikh Uchebnykh Zavedenij, Fizika
Journal Volume
46
Journal Issue
6
Journal Page Range
p. 67-74
ISSN
0021-3411
CODEN
IVUFAC

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
35093672
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CARRIER MOBILITY; CONCENTRATION RATIO; CRYSTAL DOPING; CRYSTAL GROWTH METHODS; CRYSTALS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; FORECASTING; HALL EFFECT; IMPURITIES; INDIUM ANTIMONIDES; MAGNETOMETERS; NEUTRON FLUENCE; NEUTRONS; PHYSICAL RADIATION EFFECTS; STABILIZATION; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TRANSDUCERS
Descriptors DEC
ANTIMONIDES; ANTIMONY COMPOUNDS; BARYONS; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; FERMIONS; HADRONS; INDIUM COMPOUNDS; MATERIALS; MEASURING INSTRUMENTS; MOBILITY; NUCLEONS; PHYSICAL PROPERTIES; PNICTIDES; RADIATION EFFECTS; TEMPERATURE RANGE

Optional Information

Notes
18 refs., 5 figs.