Published October 28, 2006 | Version v1
Journal article

Phase formation within Au and Ge nanoislands by room-temperature ion irradiation

  • 1. Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005 (India)
  • 2. Research Center Rossendorf, PO Box 510119, D-01314 Dresden (Germany)
  • 3. Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India)

Description

We investigate the effects of room-temperature irradiation of Au and Ge nanoislands grown on Si. Our studies show the formation of Au-Ge alloy phase within the islands and wetting of the substrate. High-resolution transmission electron microscopy along with synchrotron radiation-based x-ray reflectivity and grazing incidence x-ray diffraction measurements were performed to characterize the irradiation-induced changes brought into the sequentially deposited Au and Ge island thin films. The results are attributed to the recoil implantation and the transient melting of the nanoislands followed by the formation of crystalline alloy phase

Availability note (English)

Available online at http://stacks.iop.org/0957-4484/17/5248/nano6_20_034.pdf or at the Web site for the journal Nanotechnology (Print) (ISSN 1361-6528 ) http://www.iop.org/

Additional details

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
17
Journal Issue
20
Journal Page Range
p. 5248-5253
ISSN
0957-4484