Published March 1996 | Version v1
Journal article Metadata-only

Spectroscopy of InAs layers in GaAs in the range of transition from layer growth to three dimensional one

Creators

Description

Changes in photoluminescence spectra an photoelectric events by transfer from layer to three-dimensional growth with formation of quanta points are considered in samples with constantly stressed layer

Additional details

Additional titles

Original title (Russian)
Спектроскопия слоев InAs в GaAs в оласти перехода от слоевого к трехмерному росту

Publishing Information

Journal Title
Pis'ma v Zhurnal Ehksperimental'noj i Teoreticheskoj Fiziki
Journal Volume
63
Journal Issue
5-6
Journal Page Range
p. 418-422.
ISSN
0370-274X
CODEN
PZETAB

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
28017458
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
EPITAXY; INDIUM ARSENIDES; PHOTOLUMINESCENCE
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; EMISSION; INDIUM COMPOUNDS; LUMINESCENCE; PHOTON EMISSION; PNICTIDES