Spin-split excitation gap and spin entanglement of a pair of interacting electrons in a quantum dot
Creators
- 1. Department of Physics and Astronomy, Hunter College of the City University of New York, 695 Park Avenue, New York, NY 10065 (United States)
- 2. Air Force Research Laboratory, Space Vehicles Directorate, Kirtland Air Force Base, NM 87117 (United States)
- 3. Cavendish Laboratory, University of Cambridge, J J Thomson Avenue, Cambridge CB3 0HE (United Kingdom)
Description
We calculate the energy eigenvalues, the spin-split excitation gap (energy separation between the spin-triplet excited state and the spin-singlet ground state) and the concurrence for two interacting electrons captured in a quantum dot (QD) formed by a gigahertz electron pump which is modeled by harmonic confining potentials. We find from our calculations a peak in the QD size dependence of the energy level for the spin-singlet ground state, indicating the effect due to Coulomb blockade. In addition, we observe a local minimum in the QD size dependence of the spin-split excitation gap for a relatively narrow quasi-one-dimensional (1D) channel formed from an etched wire, but a strong positive peak for the spin-split excitation gap in its QD size dependence with a relatively wide 1D channel. From the existence of a robust spin-split excitation gap against both thermal fluctuation due to finite (low) temperatures and the nonadiabatic effect due to fast barrier variations, we predict a spin-entangled electron pair inside the QD with a weak coupling to external leads. An interference-type experiment which employs a gate-controlled electron pump and a beam splitter is proposed to verify this prediction. For the electron pump, a sinusoidal radio-frequency signal is applied to the entrance gate of a two-gated system over a narrow channel etched in a GaAs/AlGaAs heterostructure, where the measured current within the channel shows plateaus at Nef with N = 1, 2, ... being the number of captured electrons in a QD and f the frequency of the sinusoidal signal
Availability note (English)
Available from http://dx.doi.org/10.1088/0268-1242/24/11/115001Additional details
Identifiers
- DOI
- 10.1088/0268-1242/24/11/115001;
- PII
- S0268-1242(09)11172-0;
Publishing Information
- Journal Title
- Semiconductor Science and Technology
- Journal Volume
- 24
- Journal Issue
- 11
- Journal Page Range
- [10 p.]
- ISSN
- 0268-1242
- CODEN
- SSTEET
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45010981
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM ARSENIDES; EIGENVALUES; ELECTRON CAPTURE; ELECTRON PAIRS; ELECTRONS; EXCITATION; EXCITED STATES; FORECASTING; GALLIUM ARSENIDES; GROUND STATES; PEAKS; QUANTUM DOTS; QUANTUM ENTANGLEMENT; RADIOWAVE RADIATION; SIGNALS
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CAPTURE; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ENERGY LEVELS; ENERGY-LEVEL TRANSITIONS; FERMIONS; GALLIUM COMPOUNDS; LEPTONS; NANOSTRUCTURES; PNICTIDES; RADIATIONS