Femtosecond laser micro-structuring of amorphous polyether(ether)ketone at 775 nm and 387 nm
Creators
- 1. Laser Engineering Group, School of Engineering, Brownlow Street, University of Liverpool, Liverpool L69 3GQ (United Kingdom)
- 2. Department of Mechanical, Materials and Aerospace Engineering, School of Engineering, University of Liverpool, Liverpool L69 3GQ (United Kingdom)
- 3. Laser Processing Research Centre, School of Mechanical, Aerospace and Civil Engineering, University of Manchester, Manchester M13 9PL (United Kingdom)
- 4. Chongqing Engineering Research Center of New Energy Storage Devices and Applications, Chongqing University of Arts and Sciences, Chongqing 402160 (China)
- 5. Laser group, School of Mechanical Engineering, Hubei University of Technology, Wuhan (China)
- 6. Electrochemistry Branch, US Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD 20783 (United States)
Description
Laser micro-structuring of amorphous polyether(ether)ketone (PEEK) has been demonstrated with 180 fs/1 kHz NIR (775 nm) and NUV (387 nm) laser pulses. Significant differences in laser-material interaction is observed between the NIR and NUV wavelengths with single pulse ablation threshold found to be 2.01 ± 0.05 J cm−2 and 0.23 ± 0.02 J cm−2 at 775 nm and 387 nm respectively. This is connected to the requirement for multi-photon absorption at 775 nm, where PEEK is transparent, while at 387 nm, significant linear absorption within the material bandgap occurs, favouring sequential 2-photon absorption via reverse saturated absorption (RSA). Open aperture Z scan data yields a 2-photon absorption coefficient β 387(I) which is intensity dependent, consistent with RSA. Multi-pulse exposure yields incubation coefficients of S775 = 0.72 ± 0.01 and S387 = 0.85 ± 0.02. This significant reduction in NUV incubation is consistent with a much higher level of electron excitation to the conduction band. Consequently, ablation of PEEK with NUV fs pulses is superior, exhibiting much reduced melting and re-deposition. Precision NUV polymer surface micro-structuring is accomplished while laser induced periodic surface structures (LIPSS) with pitch Λ ∼ 0.4 μm are observed at the base of ablated regions, aligned parallel to the incident polarisation. The ease of NUV LIPSS generation allowed surface patterning of large scanned areas which exhibit white light diffraction due to this sub-micron periodic surface modulation. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-6463/ab8ed8Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 53
- Journal Issue
- 36
- Journal Page Range
- [14 p.]
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52057219
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ABLATION; ABSORPTION; APERTURES; DIFFRACTION; ELECTRONS; EXCITATION; KHZ RANGE; LASERS; MICROSTRUCTURE; MODULATION; MULTI-PHOTON PROCESSES; PERIODICITY; PHOTONS; POLARIZATION; PULSES; SURFACES; WAVELENGTHS
- Descriptors DEC
- BOSONS; COHERENT SCATTERING; ELEMENTARY PARTICLES; ENERGY-LEVEL TRANSITIONS; FERMIONS; FREQUENCY RANGE; LEPTONS; MASSLESS PARTICLES; OPENINGS; SCATTERING; SORPTION; VARIATIONS