Published August 2001 | Version v1
Journal article Metadata-only

Magnetic structures for spintronics

Creators

  • 1. AS RU, Heat Physics Department, Tashkent (Uzbekistan)
  • 2. Dongguk University, Quantum Functional Semiconductor Research Center, Seoul (Korea, Republic of)

Description

This short review covers the field of magneto electronics or spintronics, which has been developed very fast in recent years. The idea of electronic devices that exploit both the charge and spin of electron for their operation has given rise to this new field of science and technology. Current and anticipated future research frontiers in magnetic structures are discussed from perspective of practical devices. (author)

Additional details

Publishing Information

Journal Title
Uzbekiston Fizika Zhurnali
Journal Volume
3
Journal Issue
1-2
Journal Page Range
p. 89-92
ISSN
1025-8817

INIS

Country of Publication
Uzbekistan
Country of Input or Organization
Uzbekistan
INIS RN
39074799
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANTIFERROMAGNETIC MATERIALS; FERROMAGNETIC MATERIALS; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDES; INDIUM ARSENIDES; MAGNETIC SEMICONDUCTORS; MAGNETIC STORAGE DEVICES; MAGNETORESISTANCE; MEMORY DEVICES; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; SPIN ORIENTATION
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MAGNETIC MATERIALS; MATERIALS; MEMORY DEVICES; ORIENTATION; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; TRANSISTORS

Optional Information

Notes
3 figs., 15 refs.; This record replaces 33063973