Published July 2008 | Version v1
Journal article Metadata-only

10 W continuous-wave Nd:GdVO4 microchip laser

Creators

  • 1. National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100 (China)
  • 2. School of Information Science and Engineering, Shandong University, Jinan 250100 (China)

Description

In this letter we reported a LD end-pumped high power Nd:GdVO4 microchip laser. With a 0.5 at.%, 1.5 mm, T = 1% Nd:GdVO4 crystal, 10.1 W maximum output was achieved, corresponding an optical-optical conversion efficiency of 42.3%. The pump threshold was as low as 0.21 W

Availability note (English)

Available from http://dx.doi.org/10.1002/lapl.200810016

Additional details

Identifiers

DOI
10.1002/lapl.200810016;

Publishing Information

Journal Title
Laser physics letters (Internet)
Journal Volume
5
Journal Issue
7
Journal Page Range
p. 503-505
ISSN
1612-202X

INIS

Country of Publication
Russian Federation
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46009393
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
CRYSTALS; ENERGY EFFICIENCY; GADOLINIUM COMPOUNDS; NEODYMIUM COMPOUNDS; NEODYMIUM LASERS; OPTICAL PUMPING; OPTICS; VANADATES
Descriptors DEC
EFFICIENCY; LASERS; OXYGEN COMPOUNDS; PUMPING; RARE EARTH COMPOUNDS; SOLID STATE LASERS; TRANSITION ELEMENT COMPOUNDS; VANADIUM COMPOUNDS