Published June 15, 1981
| Version v1
Journal article
Effect of radiation damage on the charge-density-wave dynamics in NbSe3
- 1. Department of Physics, University of California, Los Angeles, California 90024
Description
We have used 2.5-MeV protons to produce radiation damage in NbSe3, in a homogeneous controlled manner. The defect concentration was varied from 10 to 500 ppm in order to study the effects of pinning on the charge-density-wave motion. Measurements were made of the nonlinear conductivity, the threshold electric field, and the dielectric constant and conductivity as a function of frequency in the range 0 --100 MHz. We find that the threshold field and the reciprocal dielectric constant vary linearly with the defect concentration and hence the restoring force
Additional details
Publishing Information
- Journal Title
- Phys. Rev., B: Condens. Matter
- Journal Volume
- 23
- Journal Issue
- 12
- Series
- Phys. Rev., B: Condens. Matter.
- Journal Page Range
- 6259-6264
- ISSN
- 0163-1829
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 12632107
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHARGE DENSITY; CRYSTAL DEFECTS; DIELECTRIC PROPERTIES; ELECTRIC CONDUCTIVITY; FREQUENCY DEPENDENCE; MAGNETIC FLUX; MHZ RANGE 01-100; NIOBIUM SELENIDES; PHYSICAL RADIATION EFFECTS; QUANTITY RATIO
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; FREQUENCY RANGE; MHZ RANGE; NIOBIUM COMPOUNDS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SELENIDES; SELENIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS