Thermo-activated spectroscopy of Bi4Ge3O12

Study of localized states in forbidden zones for Bi4Ge3O12 (BGO) monocrystals, ceramics and thin films is carried out. Study is based on measuring results of thermostimulated luminescence (TSL), thermostimulated depolarization under X-ray and UV-irradiation. Peculiarities of thin films in comparison with BGO ceramics is determined. The conclusions about kinetics character of corresponding recombination processes are reached on the base of analysis of elementary counters making up TSL curves. Capture centers (CC) parameters are defined with help number of methods. It is established, that under thermal activation of CC in BGO radiation recombination is carrying out on same centers, that in station luminescence regime and luminescence spectrum has 3 typical bands with maximums at 2.7; 2.4; 2.05 eV