Published May 15, 1992
| Version v1
Journal article
Si indiffusion on Ge(100)-(2x1) studied by core-level photoemission
Creators
- 1. Material Research Laboratory, University of Illinois at Urbana-Champaign, 104 South Goodwin Avenue, Urbana, Illinois 61801 (United States)
- 2. Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801 (United States)
Description
Core-level photoemission spectroscopy has been utilized to study the adsorption and growth of Si on Ge(100)-(2x1) by molecular-beam epitaxy. The populations of Si and Ge atoms in the surface are monitored by measuring the intensities of the surface-shifted Si and Ge core-level components. After several atomic layers of Si are deposited on Ge(100) at a growth temperature of 450 C, the top layer which forms the (2x1) reconstruction consists of Ge atoms only. This tendency for Si atoms to move below the surface persists even for growth at about room temperature
Additional details
Publishing Information
- Journal Title
- Physical Review. B, Condensed Matter
- Journal Volume
- 45
- Journal Issue
- 19
- Journal Page Range
- p. 11415-11418.
- ISSN
- 0163-1829
- CODEN
- PRBMDO
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 24004413
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ADSORPTION; CRYSTAL GROWTH; DIFFUSION; EPITAXY; MOLECULAR BEAMS; PHOTOEMISSION; SILICON
- Descriptors DEC
- BEAMS; CRYSTAL GROWTH METHODS; ELEMENTS; EMISSION; SECONDARY EMISSION; SEMIMETALS; SORPTION