Published August 1992 | Version v1
Journal article

Backscattering method possibilities for precise determination of the oxygen profile in oxide films by the use of the elastic resonance in reaction 16O(4He, 4He)16O at 3.045 MeV of 4He

  • 1. Joint Inst. for Nuclear Research, Dubna (Russian Federation). Lab. of Neutron Physics

Description

Elastic resonant backscattering can be used as a highly sensitive probe for the measurement of oxygen concentration for different oxides. This method of near-surface analysis is absolute, non-destructive and does not need calibration with the aid of standard samples. Our experimental results concern the investigation of the method possibilities for very precise determination of the concentration profile of oxygen for thin monocrystalline films of high-temperature superconducting materials. An accuracy of better than 1.5 relative per cent (rel.%) for a 30 nm depth resolution and 0.6 rel.% for total oxygen content determination has been reached, which is an uncommon level of precision for the backscattering method. Our results are important for those applications in which oxygen profiling is essential. (author)

Additional details

Publishing Information

Journal Title
Surface and Interface Analysis
Journal Volume
18
Journal Issue
8
Journal Page Range
p. 585-588.
ISSN
0142-2421
CODEN
SIANDQ

Conference

Title
ECASIA 91 conference.
Dates
14-18 Oct 1991.
Place
Budapest (Hungary).

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
24000032
Subject category
S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ACCURACY; ALPHA REACTIONS; BACKSCATTERING; DEPTH; FILMS; MEV RANGE 01-10; OXYGEN; OXYGEN 16 TARGET; SILICON OXIDES; SPATIAL DISTRIBUTION; SPECTROSCOPY
Descriptors DEC
CHALCOGENIDES; DIMENSIONS; DISTRIBUTION; ELEMENTS; ENERGY RANGE; MEV RANGE; NONMETALS; NUCLEAR REACTIONS; OXIDES; OXYGEN COMPOUNDS; SCATTERING; SILICON COMPOUNDS; TARGETS