Published June 2000 | Version v1
Journal article Metadata-only

Low-temperature photoluminescence and X-ray diffractometry study of InxGa1-xAs quantum wells

Creators

  • 1. Lebedev Institute of Physics, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 117924 (Russian Federation)
  • 2. Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow, 117333 (Russian Federation)
  • 3. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Mokhovaya ul. 11, Moscow, 103907 (Russian Federation)
  • 4. Institute of Physics and Technology, Russian Academy of Sciences, ul. Krasikova 25a, Moscow, 117218 (Russian Federation)

Description

The structures grown by molecular-beam epitaxy with InxGa1-xAs quantum wells (QWs) in GaAs were studied by X-ray diffractometry and low-temperature photoluminescence techniques. The inhomogeneity of the QW composition along the growth direction was established. Energy positions of the exciton recombination lines in the QWs with step-graded In distribution were calculated, and good agreement with the experimental data was obtained

Additional details

Identifiers

DOI
10.1134/1.1188057;

Publishing Information

Journal Title
Semiconductors
Journal Volume
34
Journal Issue
6
Journal Page Range
p. 693-699
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35051887
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Numerical Data, Translation
Descriptors DEI
EXCITONS; EXPERIMENTAL DATA; GALLIUM ARSENIDES; INDIUM ARSENIDES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; THIN FILMS; X-RAY DIFFRACTION
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DATA; DIFFRACTION; EMISSION; EPITAXY; FILMS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INFORMATION; LUMINESCENCE; MATERIALS; NANOSTRUCTURES; NUMERICAL DATA; PHOTON EMISSION; PNICTIDES; QUASI PARTICLES; SCATTERING

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 34, 719-725 (No. 6, 2000); (c) 2000 MAIK ''Nauka / Interperiodica''.