Growth and dielectric properties of Ca3NbGa3Si2O14 crystals

A new langasite type single crystal Ca3NbGa3Si2O14 (CNGS) was grown by Czochralski (CZ) method. The structure of CNGS crystal was determined by X-ray powder diffraction, the lattice parameters were a=0.8087 ± 0.0001 nm, c=0.4974 ± 0.0002 nm, V=0.2817 ± 0.0002 nm3; The congruency of CNGS was examined by measuring the chemical composition of the grown crystal by quantitative X-ray fluorescent (XRF) analysis. The melting point of CNGS crystal was measured by using the differential scanning calorimetry (DSC). Dielectric properties of (1 1 0) wafer plate were studied in the temperature range from 298.15 to 873.15 K; the frequency dependence of dielectric loss in the frequency range 10 Hz-13 MHz was measured