Radiation damage testing of transistors for SSC front-end electronics

This paper reports that over the ten year expected lifetime of a typical SSC detector operating at the design luminosity of 1033 cm-2s-1, the front-end electronics at large pseudorapidities may receive total doses as high as 20 MRad (Si) of ionizing radiation and 1016 neutrons/cm2. Discrete JFETS and monolithic MOS and bipolar transistors have been irradiated at 10 MRad (Si) and 1014 neutrons/cm2, and the effect on transfer characteristics and noise performance have been measured. All transistors were still functional after irradiation but suffered increased noise and the MOS transistors showed significant threshold shifts and increased leakage currents