Effect of p–d hybridization, structural distortion and cation electronegativity on electronic properties of ZnSnX2 (X=P, As, Sb) chalcopyrite semiconductors
Creators
- 1. National Institute of Technology, Rourkela 769008, Odisha (India)
Description
Significant effects of p–d hybridization, structural distortion and cation-electro-negativity are found on band gap in ZnSnX2 (X=P, As, Sb). Our study suggests these compounds to be direct band gap semiconductors with band gaps of 1.23, 0.68 and 0.19 eV respectively. Lattice constants, tetragonal distortion (η), anion displacement, bond lengths and bulk moduli are calculated by Density Functional Theory based on Tight binding Linear Muffin-Tin orbital method. Our result of structural properties is in good agreement with the available experimental and other theoretical results. Calculated band gaps also agree well with the experimental works within LDA limitation. Unlike other semiconductors in the group II–IV–V2, there is a reduction in the band gap of 0.22, 0.20 and 0.24 eV respectively in ZnSnX2 (X=P, As, Sb) due to p–d hybridization. Structural distortion decreases band gap by 0.20, 0.12 and 0.10 eV respectively. We find that cation electronegativity effect is responsible for increasing the band gap relative to their binary analogs GaInP2, InGaAs2 and GaInSb2 respectively and increment are 0.13, 0.04 and 0.13 eV respectively. - Graphical abstract: One unit cell of ZnSnX2 (X=P, As, Sb) chalcopyrite semiconductor. Semiconductors ZnSnX2 (X=P, As, Sb) are found to be direct band gap semiconductors with band gaps 1.23, 0.68 and 0.19 eV respectively. The quantitative estimate of effects of p–d hybridization, structural distortion and cation electronegativity shows band gaps change significantly due to these effects. Highlights: ► ZnSnX2 (X=P, As, Sb) are direct band gap semiconductors. ► These have band gaps of 1.23 eV, 0.68 eV and 0.19 eV respectively. ► The band gap reduction due to p–d hybridization is 13.41%, 18.51% and 40% respectively. ► Band gap reduction due to structural distortion is 12.12%, 11.11% and 16.66% respectively. ► Band gap increases 8.38%, 3.70% and 21.31% respectively due to cation electronegativity
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jssc.2013.01.007Additional details
Identifiers
- DOI
- 10.1016/j.jssc.2013.01.007;
- PII
- S0022-4596(13)00016-9;
Publishing Information
- Journal Title
- Journal of Solid State Chemistry
- Journal Volume
- 200
- Journal Page Range
- p. 279-286
- ISSN
- 0022-4596
- CODEN
- JSSCBI
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46010737
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Descriptors DEI
- ANIONS; BOND LENGTHS; CATIONS; CHALCOPYRITE; DENSITY FUNCTIONAL METHOD; ELECTRONEGATIVITY; EV RANGE; GALLIUM ARSENIDES; HYBRIDIZATION; INDIUM ARSENIDES; LATTICE PARAMETERS; MUFFIN-TIN POTENTIAL; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CALCULATION METHODS; CHARGED PARTICLES; DIMENSIONS; ENERGY RANGE; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; IONS; LENGTH; MATERIALS; MINERALS; PNICTIDES; POTENTIALS; SULFIDE MINERALS; VARIATIONAL METHODS
Optional Information
- Copyright
- Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.