Manipulating magnetism and transport properties of with a low carrier concentration
Creators
- 1. Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, China
- 2. School of Science, Westlake University, Hangzhou 310024, China
- 3. Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou 310024, China
- 4. Department of Applied Physics, Zhejiang University of Technology, Hangzhou 310023, China
- 5. School of Physics, Interdisciplinary Center for Quantum Information and State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310058, China
- 6. Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- 7. Department of Physics, Boston College, Chestnut Hill, Massachusetts 02467, USA
Description
Materials that exhibit strongly coupled magnetic order and electronic properties are crucial for both fundamental research and technological applications. However, finding a material that not only shows remarkable magnetoresistive responses but also has an easily tunable ground state remains a challenge. Here, we report successful manipulation of the magnetic and transport properties of , which is transformed from an A-type antiferromagnet exhibiting colossal magnetoresistance into a ferromagnet with metallic behavior. The dramatic alteration results from a low hole concentration of induced by changing the growth conditions. Electronic structure and total energy calculations confirm the tunability of magnetism with a small carrier concentration for . It is feasible to switch between the magnetic states by using field-effect to control the carrier density, thereby changing the magneto-electronic response. The controllable magnetism and electrical transport of make it a potential candidate for spintronics.
Additional details
Identifiers
- DOI
- 10.1103/PhysRevB.109.224428;
- Crossref Funder ID
- 10.13039/501100001809; 10.13039/501100004608; 10.13039/501100008081; 10.13039/501100003397; 10.13039/100000181;
Publishing Information
- Journal Title
- Physical Review B
- Journal Volume
- 109
- Journal Issue
- 22
- Journal Page Range
- 9 pgs.
- ISSN
- 1550-235X
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANTIFERROELECTRIC MATERIALS; ANTIFERROMAGNETISM; CARRIER DENSITY; CONTROL; CRYSTAL GROWTH; ELECTRONIC STRUCTURE; EUROPIUM SULFIDES; FERROMAGNETISM; GROUND STATES; HOLES; MAGNETIC MATERIALS; MAGNETIC PROPERTIES; MAGNETISM; MAGNETORESISTANCE; SWITCHES
- Descriptors DEC
- CHALCOGENIDES; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ENERGY LEVELS; EQUIPMENT; EUROPIUM COMPOUNDS; MAGNETISM; MATERIALS; PHYSICAL PROPERTIES; RARE EARTH COMPOUNDS; SULFIDES; SULFUR COMPOUNDS
Optional Information
- Copyright
- ©2024 American Physical Society
- Contract/Grant/Project number
- 12204094; 12325401; BK20220796; RF1028623289; WHMFC202205; FA2386-21-1-4059
- Notes
- Contact Email: Contact author: sdong@seu.edu.cn; Contact Email: Contact author: wzc@seu.edu.cn; Record automatically processed
- Funding organization
- National Natural Science Foundation of China; Natural Science Foundation of Jiangsu Province; Southeast University; Huazhong University of Science and Technology; Air Force Office of Scientific Research