Life prediction of OLED for constant-stress accelerated degradation tests using luminance decaying model
- 1. College of Energy and Mechanical Engineering, Shanghai University of Electric Power, Shanghai 200090 (China)
- 2. Shanghai Tianyi Electric Co., Ltd., Shanghai 201611 (China)
- 3. School of Computing, Engineering and Mathematics, University of Western Sydney, Sydney 2751 (Australia)
- 4. Department of Mechanical and Aerospace Engineering, The Ohio State University, OH 43210 (United States)
Description
In order to acquire the life information of organic light emitting diode (OLED), three groups of constant stress accelerated degradation tests are performed to obtain the luminance decaying data of samples under the condition that the luminance and the current are respectively selected as the indicator of performance degradation and the test stress. Weibull function is applied to describe the relationship between luminance decaying and time, least square method (LSM) is employed to calculate the shape parameter and scale parameter, and the life prediction of OLED is achieved. The numerical results indicate that the accelerated degradation test and the luminance decaying model reveal the luminance decaying law of OLED. The luminance decaying formula fits the test data very well, and the average error of fitting value compared with the test data is small. Furthermore, the accuracy of the OLED life predicted by luminance decaying model is high, which enable rapid estimation of OLED life and provide significant guidelines to help engineers make decisions in design and manufacturing strategy from the aspect of reliability life. - Highlights: • We gain luminance decaying data by accelerated degradation tests on OLED. • The luminance decaying model objectively reveals the decaying law of OLED luminance. • The least square method (LSM) is employed to calculate Weibull parameters. • The plan designed for accelerated degradation tests proves to be feasible. • The accuracy of the OLED life and the luminance decaying fitting formula is high
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jlumin.2014.05.024Additional details
Identifiers
- DOI
- 10.1016/j.jlumin.2014.05.024;
- PII
- S0022-2313(14)00316-0;
Publishing Information
- Journal Title
- Journal of Luminescence
- Journal Volume
- 154
- Journal Page Range
- p. 491-495
- ISSN
- 0022-2313
- CODEN
- JLUMA8
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46107094
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ACCURACY; LEAST SQUARE FIT; LIGHT EMITTING DIODES; STRESSES
- Descriptors DEC
- MATHEMATICAL SOLUTIONS; MAXIMUM-LIKELIHOOD FIT; NUMERICAL SOLUTION; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES
Optional Information
- Copyright
- Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.