Published December 1, 1988
| Version v1
Journal article
Ion-beam-induced epitaxial crystallization kinetics in ion implanted GaAs
- 1. Microelectronics and Materials Technology Centre, RMIT Melbourne 3000, Australia
Description
Thin amorphous GaAs layers on (100)-oriented substrates, generated by Si+ ion bombardment at 77 K, have been observed to recrystallize epitaxially during 1.5-MeV Ne+ bombardment in the temperature range 75--135 0C. Crystallization proceeds linearly with increasing ion fluence, except in the near-surface region, and the process is characterized by an activation energy of 0.16 eV, which is an order of magnitude smaller than that obtained for conventional thermal annealing at much higher temperatures
Additional details
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 64
- Journal Issue
- 11
- Series
- J. Appl. Phys.
- Journal Page Range
- 6567-6569
- ISSN
- 0021-8979
- CODEN
- JAPIA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 20015288
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ACTIVATION ENERGY; AMORPHOUS STATE; ANNEALING; CRYSTALLIZATION; EPITAXY; GALLIUM ARSENIDES; ION BEAMS; ION COLLISIONS; ION IMPLANTATION; LOW TEMPERATURE; MEDIUM TEMPERATURE; NEON IONS; PHYSICAL RADIATION EFFECTS; THIN FILMS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CHARGED PARTICLES; COLLISIONS; ENERGY; FILMS; GALLIUM COMPOUNDS; HEAT TREATMENTS; IONS; PHASE TRANSFORMATIONS; RADIATION EFFECTS