The thermal generation of charge carrier in hetero-epitaxy Si-Ge/Si structures with films doped by titanium

The results of observation of the charge carrier generation and the electromotive force appearance on homogeneously heated n-type silicon-germanium films, heavily doped with titanium and grown by deposition from the gas phase on silicon p-type substrates are presented. The maximum value of the electromotive force of 3 mV is recorded in the temperature range 500-600 K at a dark short-circuit current of 0.5-1 μA, the value of which increases with increasing temperature and reaches 3 μA at 900 K. When the contacts are placed on the film and on the substrate, that is when the parameters of the Si-Ge/Si structure proper are measured with its homogeneous heating, the dark current density at 700 K is 2 μA/cm², and the volume thermoelectric power is 4 mV. (authors)