Published June 2016 | Version v1
Journal article Metadata-only

Epitaxial NbN/AlN/NbN tunnel junctions on Si substrates with TiN buffer layers

Creators

  • 1. University of Chinese Academy of Sciences, Beijing 100049 (China)
  • 2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China)
  • 3. Advanced ICT Research Institute, National Institute of Information and Communications Technology (Japan)
  • 4. Shanghai Tech University, Shanghai 201210 (China)

Description

We have developed epitaxial NbN/AlN/NbN tunnel junctions on Si (100) substrates with a TiN buffer layer. A 50-nm-thick (200)-oriented TiN thin film was introduced as the buffer layer for epitaxial growth of NbN/AlN/NbN trilayers on Si substrates. The fabricated NbN/AlN/NbN junctions demonstrated excellent tunneling properties with a high gap voltage of 5.5 mV, a large IcRN product of 3.8 mV, a sharp quasiparticle current rise with a ΔVg of 0.4 mV, and a small subgap leakage current. The junction quality factor Rsg/RN was about 23 for the junction with a Jc of 47 A/cm2 and was about 6 for the junction with a Jc of 3.0 kA/cm2. X-ray diffraction and transmission electron microscopy observations showed that the NbN/AlN/NbN trilayers were grown epitaxially on the (200)-orientated TiN buffer layer and had a highly crystalline structure with the (200) orientation.

Additional details

Identifiers

DOI
10.1063/1.4954743;

Publishing Information

Journal Title
AIP Advances
Journal Volume
6
Journal Issue
6
Journal Page Range
p. 065119-065119.6
ISSN
2158-3226
CODEN
AAIDBI

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
48057723
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ALUMINIUM NITRIDES; BUFFERS; CRITICAL CURRENT; CURRENT DENSITY; ELECTRIC CONTACTS; EPITAXY; LAYERS; LEAKAGE CURRENT; NIOBIUM NITRIDES; QUALITY FACTOR; SEMICONDUCTOR JUNCTIONS; SUBSTRATES; SUPERCONDUCTING JUNCTIONS; THIN FILMS; TITANIUM; TITANIUM NITRIDES; TRANSMISSION; TRANSMISSION ELECTRON MICROSCOPY; TUNNEL EFFECT; X-RAY DIFFRACTION
Descriptors DEC
ALUMINIUM COMPOUNDS; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; CURRENTS; DIFFRACTION; DIMENSIONLESS NUMBERS; ELECTRIC CURRENTS; ELECTRICAL EQUIPMENT; ELECTRON MICROSCOPY; ELEMENTS; EQUIPMENT; FILMS; METALS; MICROSCOPY; NIOBIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; REFRACTORY METAL COMPOUNDS; SCATTERING; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; TUNNEL JUNCTIONS

Optional Information

Notes
(c) 2016 Author(s)