Photoelectric properties of Ga- and Li-doped ZnO films

The research of photoelectric characteristics of transparent ZnO films was done. The possibility of controlling the conductivity by introduction of impurities is presented. The ratio of conductivity of the films doped with donor and acceptor impurities reaches values of 109. It is shown that in the films doped with Li impurity, which provides a significant reduction in the dark conductivity without changing the conductivity type, it is possible to achieve a significant increase in the ratio of photoconductivity to the dark conductivity. This phenomenon can be used for the development of solid state photodetectors in UV range