Published January 2007 | Version v1
Journal article

The effect of Mn2+ doping on structure and photoluminescence of ZnO nanofilms synthesized by sol-gel method

  • 1. Graduate School of the Chinese Academy of Sciences (China)
  • 2. Key Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone Changchun 130033 (China)
  • 3. Center for Advanced Optoelectronic Functional Material Research, Northeast Normal University, Changchun 130024 (China)

Description

Mn-doped ZnO nanocrystallite thin films with different Mn contents were synthesized by sol-gel method. Thermal annealing processes in N2 ambient at 500 deg. C were employed to improve the film quality. Physical properties were investigated using XRD, PL and EPR. XRD spectra show all the films are hexagonal wurtzite structures and diffraction peaks shift to the big angle with increasing Mn content, which indicates that Mn has entered the ZnO lattice and substituted the Zn site. Small quantity of manganese oxide phase also presents in the spectra. Room-temperature photoluminescence spectra show the ultraviolet emission shift to low-energy side with the increasing Mn content, and the defect-related emissions were passivated by manganese oxide. EPR pattern indicates that Mn2+ exist in ZnMnO system

Additional details

Identifiers

DOI
10.1016/j.jlumin.2006.01.182;
PII
S0022-2313(06)00185-2;

Publishing Information

Journal Title
Journal of Luminescence
Journal Volume
122-123
Journal Page Range
p. 352-354
ISSN
0022-2313
CODEN
JLUMA8

Conference

Title
2005 international conference on luminescence and optical spectroscopy of condensed matter
Acronym
ICL'05
Dates
25-29 Jul 2005
Place
Beijing (China)

Optional Information

Copyright
Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.