Published September 1986 | Version v1
Journal article

Raman studies of the high-Tsub(c) compounds Nb3(Al-Ge) and V3Si

  • 1. Technische Univ. Muenchen, Garching (Germany, F.R.). Fakultaet fuer Physik
  • 2. Siemens A.G., Erlangen (Germany, F.R.). Forschungslaboratorium
  • 3. Kernforschungszentrum Karlsruhe G.m.b.H. (Germany, F.R.). Inst. fuer Nukleare Festkoerperphysik

Description

The Raman spectra of Nb3(Al-Ge) with a superconducting-transition temperature of Tsub(c) approx.=20 K were measured over the temperature range from 300 K to 1.8 K. For V3Si, the unfound Fsub(2g) Raman-active phonon has been observed. In Nb3(Al-Ge) the positions of the Esub(g) and Fsub(2g) phonon peaks, as well as their temperature dependences, show similarities, but also some significant differences to the other high Tsub(c) compounds Nb3Sn and V3Si. This behaviour agrees well with a recent theory of the electron-phonon coupling in high Tsub(c) A15 materials. (author)

Additional details

Publishing Information

Journal Title
J. Phys., F (London). Met. Phys.
Journal Volume
16
Journal Issue
9
Series
J. Phys., F (London). Met. Phys.
Journal Page Range
1299-1306
ISSN
0305-4608
CODEN
JPFMA