Published February 2011 | Version v1
Journal article

Radiation effects of a 10-bit CMOS A/D converter under different dose rates

  • 1. Graduate University of Chinese Academy of Sciences, Beijing (China)
  • 2. Xinjiang Key Laboratory of electronic information materials and device, Urumqi (China)
  • 3. Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi (China)

Description

Radiation effects and room-temperature annealing behavior of CMOS analog-to-digital converter (ADC) irradiated by 60Co γ-rays were investigated. The results show that the response of the ADC is very different between low-and high-dose-rate irradiation. Ionizing radiation damage at high dose rate is more than that at low dose rate. But room-temperature annealing after high-dose-rate irradiation can remove the difference. It shows obviously time dependence effect. Based on the analysis of the mechanism of CMOS ionizing radiation damage, possible sensitive parameters and mechanism for this response are discussed. (authors)

Additional details

Publishing Information

Journal Title
Nuclear Electronics and Detection Technology
Journal Volume
31
Journal Issue
2
Journal Page Range
p. 204-208
ISSN
0258-0934

Optional Information

Notes
3 figs., 10 refs.