Deposit of carbon nitride films by laser ablation

The preparation of carbon nitride thin films by ablation of different target compounds (graphite, guanazole) in a reactive atmosphere of ammonia with an ArF excimer laser (193 nm) is reported. The films were deposited on different substrates (silicon wafers and aluminium plates) and were analysed with different techniques such as profilometry. Fourier transform infrared (FTIR) and energy dispersive X-ray spectroscopy (EDX). For both targets, a comparative study of the influence of the ammonia total pressure on the growth rate, composition and properties of the obtained material has been done. A gradual nitrogen incorporation in the films with increasing ammonia pressure and also the presence of nitrogen bonded to carbon in different configuration (simple, double and/or triple bonds) was observed. The use of guanazole targets leads to higher efficiency in the nitrogen incorporation and in the formation of simple C-N bonds. (Author) 14 refs