Published June 14, 1996 | Version v1
Journal article Metadata-only

Radiation hardness of semiconductor detectors for high-energy physics

Creators

  • 1. Tomskij Gosudarstvennyj Univ., Tomsk (Russian Federation). Sibirskij Fiziko-Tekhnicheskij Inst.

Description

The concept of radiation hardness of semiconductor materials in terms of local charge neutrality is proposed. Deep centres are invoked to play the basic role in the attainment of radiation hardness by high-resistivity semiconductor charged particle detectors exposed to neutron irradiation. (author)

Additional details

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
29
Journal Issue
6
Journal Page Range
p. 1559-1563.
ISSN
0022-3727
CODEN
JPAPBE

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
27068937
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
CHARGED PARTICLE DETECTION; HIGH ENERGY PHYSICS; RADIATION DOSES; RADIATION HARDENING; SEMICONDUCTOR DETECTORS; SUPERCONDUCTING COLLOID DETECTORS
Descriptors DEC
DETECTION; HARDENING; MEASURING INSTRUMENTS; PHYSICAL RADIATION EFFECTS; PHYSICS; RADIATION DETECTION; RADIATION DETECTORS; RADIATION EFFECTS