Floating electrode transistor based on purified semiconducting carbon nanotubes for high source–drain voltage operation

We report floating-electrode-based thin-film transistors (F-TFTs) based on a purified semiconducting single-walled carbon nanotube (swCNT) network for a high source–drain voltage operation. At a high source–drain voltage, a conventional swCNT-TFT exhibited poor transistor performance with a small on–off ratio, which was attributed to the reduced Schottky barrier modulation at a large bias. In the F-TFT device, an swCNT network channel was separated into a number of channels connected by floating electrodes. The F-TFTs exhibited a much higher on–off ratio than a conventional swCNT-TFT with a single channel. This work should provide an important guideline in designing swCNT-TFTs for high voltage applications such as displays. (paper)