Fabrication of an all solid-state electrochromic device using zirconium dioxide as an ion-conducting layer
Creators
- 1. Hacettepe University, Department of Physics Engineering, Thin Film Preparation and Characterization Laboratory, 06800, Beytepe, Ankara (Turkey)
Description
Highlights: • Optical and electrochromic (EC) behavior of ZrO2 were studied. • The EC behavior of a half-cell structure of ZrO2/NiO/ITO/glass was investigated. • An uniquely designed all-solid-state EC device was fabricated. • The large optical modulation was found to be 53% with the applied voltages of ±3 V. • The ZrO2 film was used as Li+ ion conducting layer in the EC device. - Abstract: Zirconium dioxide (ZrO2) thin films were deposited onto glass substrates, indium tin oxide (ITO) coated glass substrates and nickel oxide (NiO) / ITO / glass structures by reactive radio frequency (RF) magnetron sputtering using a zirconium target at room temperature. The deposition power was held at 75 W and the influence of deposition pressure and film thickness on the properties of the ZrO2 films were investigated. Optical, electrochemical and electrochemical impedance spectroscopy measurements of the ZrO2 films were performed and the electrochromic behavior of a half-cell structure of ZrO2 / NiO / ITO / glass was investigated in a wide spectral range. The amount of inserted/extracted charges into/from each film during bleaching/coloring process were investigated in detail. The highest coloration efficiency (24.3 cm2/C) and optical modulation (42.8%) at a wavelength of 550 nm were found for a ZrO2 / NiO / ITO / glass structure having a ZrO2 film with a thickness of 100 nm, deposited at 4.00 Pa. Finally, a unique design of an all solid-state electrochromic device with a configuration of ITO / NiO / wet lithiated ZrO2 / dry lithiated tungsten oxide (WO3) / ITO / glass was fabricated. The optical modulation of the device was 53% at 550 nm for the applied potentials of ±3 V.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2018.08.030Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2018.08.030;
- PII
- S0040609018305613;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 664
- Journal Page Range
- p. 70-78
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 50038159
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DEPOSITION; ELECTROCHROMISM; GLASS; INDIUM COMPOUNDS; IONIC CONDUCTIVITY; LAYERS; LITHIUM IONS; MAGNETRONS; NICKEL OXIDES; SOLIDS; SPECTROSCOPY; SUBSTRATES; THICKNESS; THIN FILMS; TIN OXIDES; TUNGSTEN OXIDES; ZIRCONIUM OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; DIMENSIONS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELECTRO-OPTICAL EFFECTS; EQUIPMENT; FILMS; IONS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; NICKEL COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; REFRACTORY METAL COMPOUNDS; TIN COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TUNGSTEN COMPOUNDS; ZIRCONIUM COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.