Published March 15, 1994 | Version v1
Journal article Metadata-only

FOXFET biased microstrip detectors: an investigation of radiation sensitivity

Creators

  • 1. INFN, Sezione di Padova (Italy)
  • 2. Dipt. di Fisica, Univ. di Padova (Italy)
  • 3. Facolta di Ingegneria, Univ. di Modena (Italy)
  • 4. Ist. di Elettrotecnica, Univ. di Cagliari (Italy)
  • 5. INFN, Sezione di Bologna (Italy)
  • 6. Facolta di Ingegneria, Univ. di Cassino (Italy)
  • 7. Dipt. di Elettronica e Informatica, Univ. di Padova (Italy)

Description

Radiation effects have been studied on single-sided FOXFET biased detectors and related test patterns. Radiation induced modifications of the electrical parameters and their thermal stability at room temperature and upon annealings have been studied for proton and γ irradiations. The detector electrical characteristics have been correlated to Si bulk and surface damage, and to changes of the FOXFET properties. Interstrip resistance and capacitance have been investigated for γ, p+ and n irradiations. (orig.)

Additional details

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Journal Volume
342
Journal Issue
1
Journal Page Range
p. 39-48.
ISSN
0168-9002
CODEN
NIMAER

Conference

Title
1. international symposium on development and application of semiconductor tracking detectors (Hiroshima STD Symposium).
Dates
22-24 May 1993.
Place
Hiroshima (Japan).

INIS

Country of Publication
Netherlands
Country of Input or Organization
Netherlands
INIS RN
25056109
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNEALING; CAPACITANCE; ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; GAMMA RADIATION; LEAKAGE CURRENT; MEV RANGE 01-10; NEUTRON BEAMS; PHYSICAL RADIATION EFFECTS; POSITION SENSITIVE DETECTORS; PROTON BEAMS; RADIATION DETECTORS; RADIATION EFFECTS; SEMICONDUCTOR JUNCTIONS; SI SEMICONDUCTOR DETECTORS; SILICON; SILICON DIODES; STABILITY; TEMPERATURE RANGE 0273-0400 K
Descriptors DEC
BEAMS; CURRENTS; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; IONIZING RADIATIONS; MEASURING INSTRUMENTS; MEV RANGE; NUCLEON BEAMS; PARTICLE BEAMS; PHYSICAL PROPERTIES; RADIATIONS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMIMETALS; TEMPERATURE RANGE; TRANSISTORS