Published March 2007 | Version v1
Journal article

Fabrication of fully epitaxial magnetic tunnel junctions with a Co2MnSi thin film and a MgO tunnel barrier

  • 1. Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokkaido University, N14, W9, Kita-ku, Sapporo 060-0814 (Japan)

Description

Fully epitaxial magnetic tunnel junctions (MTJs) were fabricated with a Co-based full-Heusler alloy Co2MnSi (CMS) thin film having the ordered L21 structure as a lower electrode, a MgO tunnel barrier, and a Co50Fe50 upper electrode. Reflection high-energy electron diffraction patterns observed in situ for each layer in the MTJ layer structure during fabrication clearly indicated that all layers of the CMS lower electrode, MgO tunnel barrier, and Co50Fe50 upper electrode grew epitaxially. The microfabricated fully epitaxial CMS/MgO/Co50Fe50 MTJs demonstrated relatively high tunnel magnetoresistance ratios of 90% at room temperature and 192% at 4.2 K

Additional details

Identifiers

DOI
10.1016/j.jmmm.2006.10.919;
PII
S0304-8853(06)02141-X;

Publishing Information

Journal Title
Journal of Magnetism and Magnetic Materials
Journal Volume
310
Journal Issue
2
Journal Page Range
p. 2006-2008
ISSN
0304-8853
CODEN
JMMMDC

Conference

Title
17. international conference on magnetism
Dates
20-25 Aug 2006
Place
Kyoto (Japan)

Optional Information

Copyright
Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.