Published July 2024 | Version v1
Journal article Metadata-only

Metal organic vapor-phase epitaxy growth of multilayer stacked InAsSb/InAsP superlattices on GaAs and InAs substrate

Creators

  • 1. Faculty of Engineering, University of Miyazaki, Miyazaki, 889-2192 (Japan)
  • 2. Graduate School of Information Science and Technology, Hokkaido University, Hokkaido, 060-0814 (Japan)

Description

Midinfrared photonic devices are used as lasers and photodetectors in optical gas sensors and fiber-optic communications. Herein, the pair number dependence and strain compensation dependence of the InAsSb/InAsP superlattice structure to increase luminescence intensity and reduce crystal defects is investigated. InAs substrates are used to demonstrate various effects of strain compensation, including its role in increasing luminescence intensity and improving the surface flatness. Furthermore, the photoluminescence spectra of a grown superlattice between the InAs substrate and GaAs substrate with two-temperature-step growth are shown. (© 2024 Wiley‐VCH GmbH)

Additional details

Identifiers

DOI
10.1002/pssa.202300824;

Publishing Information

Journal Title
Physica Status Solidi. A, Applications and Materials Science (Online)
Journal Volume
221
Journal Issue
13
Journal Page Range
p. 1-5
ISSN
1862-6319
CODEN
PSSABA

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
55079661
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ATOMIC FORCE MICROSCOPY; BAND THEORY; CRYSTAL DEFECTS; FERMI LEVEL; FIBER OPTICS; GALLIUM ARSENIDES; INDIUM ANTIMONIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; PHOTODETECTORS; PHOTOLUMINESCENCE; ROUGHNESS; SENSORS; SUBSTRATES; SUPERLATTICES; VAPOR PHASE EPITAXY; X-RAY DIFFRACTION
Descriptors DEC
ANTIMONIDES; ANTIMONY COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; DIFFRACTION; EMISSION; ENERGY LEVELS; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; MICROSCOPY; OPTICS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHOTON EMISSION; PNICTIDES; SCATTERING; SURFACE PROPERTIES

Optional Information

Notes
AID: 2300824; Special issue: compound semiconductors