Published 2000
| Version v1
Miscellaneous
An evaluation of phosphorus and cavity gettering
Creators
- 1. The Australian National University, ACT (Australia)
Description
Full text: The effectiveness of phosphorus and cavity gettering techniques has been investigated by measuring carrier lifetimes for Cz silicon wafers implanted with copper doses of 1012, 1013 and 1014 Cu cm-2. The lifetime measurements indicate that both techniques increase the wafer quality. Phosphorus gettering was particularly successful with improvements of up to 12 times that of the contaminated lifetime. However, it was also found that the process of gettering layer formation reduces uncontaminated wafer lifetime. This is believed to be due to the injection of silicon interstitials into the wafer bulk
Additional details
Publishing Information
- Imprint Title
- 14th National Congress of the Australian Institute of Physics. Congress abstracts and posters summaries
- Imprint Pagination
- 125 p.
- Journal Page Range
- p. TF27
Conference
- Title
- 14. National Congress of the Australian Institute of Physics. Driving technology through discovery, understanding and innovation
- Dates
- 10-15 Dec 2000
- Place
- Adelaide, SA (Australia)
INIS
- Country of Publication
- Australia
- Country of Input or Organization
- Australia
- INIS RN
- 32027969
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, Non-conventional Literature
- Descriptors DEI
- CARRIER LIFETIME; CAVITIES; COMPARATIVE EVALUATIONS; COPPER; GETTERING; ION IMPLANTATION; PHOSPHORUS; SILICON
- Descriptors DEC
- ELEMENTS; EVALUATION; LIFETIME; METALS; NONMETALS; SEMIMETALS; TRANSITION ELEMENTS