A 6.25 Gb/s equalizer in 0.18 μm CMOS technology for high-speed SerDes
Creators
- 1. Institute of RF- and OE-ICs, Southeast University, Nanjing 210096 (China)
Description
This paper presents a 0.18 μm CMOS 6.25 Gb/s equalizer for high speed backplane communication. The proposed equalizer is a combined one consisting of a one-tap feed-forward equalizer (FFE) and a two-tap half-rate decision feedback equalizer (DFE) in order to cancel both pre-cursor and post-cursor ISI. By employing an active-inductive peaking circuit for the delay line, the bandwidth of the FFE is increased and the area cost is minimized. CML-based circuits such as DFFs, summers and multiplexes all help to improve the speed of DFEs. Measurement results illustrate that the equalizer operates well when equalizing 6.25 Gb/s data is passed over a 30-inch channel with a loss of 22 dB and consumes 55.8 mW with the supply voltage of 1.8 V. The overall chip area including pads is 0.3 × 0.5 mm2. (semiconductor integrated circuits)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/34/12/125010Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 34
- Journal Issue
- 12
- Journal Page Range
- [7 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47018479
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ELECTRIC POTENTIAL; INTEGRATED CIRCUITS; SEMICONDUCTOR MATERIALS; VELOCITY
- Descriptors DEC
- ELECTRONIC CIRCUITS; MATERIALS; MICROELECTRONIC CIRCUITS