Published December 1, 2013 | Version v1
Journal article

A 6.25 Gb/s equalizer in 0.18 μm CMOS technology for high-speed SerDes

  • 1. Institute of RF- and OE-ICs, Southeast University, Nanjing 210096 (China)

Description

This paper presents a 0.18 μm CMOS 6.25 Gb/s equalizer for high speed backplane communication. The proposed equalizer is a combined one consisting of a one-tap feed-forward equalizer (FFE) and a two-tap half-rate decision feedback equalizer (DFE) in order to cancel both pre-cursor and post-cursor ISI. By employing an active-inductive peaking circuit for the delay line, the bandwidth of the FFE is increased and the area cost is minimized. CML-based circuits such as DFFs, summers and multiplexes all help to improve the speed of DFEs. Measurement results illustrate that the equalizer operates well when equalizing 6.25 Gb/s data is passed over a 30-inch channel with a loss of 22 dB and consumes 55.8 mW with the supply voltage of 1.8 V. The overall chip area including pads is 0.3 × 0.5 mm2. (semiconductor integrated circuits)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/34/12/125010

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
34
Journal Issue
12
Journal Page Range
[7 p.]
ISSN
1674-4926

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47018479
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ELECTRIC POTENTIAL; INTEGRATED CIRCUITS; SEMICONDUCTOR MATERIALS; VELOCITY
Descriptors DEC
ELECTRONIC CIRCUITS; MATERIALS; MICROELECTRONIC CIRCUITS