Low-energy ion irradiation in HiPIMS to enable anatase TiO2 selective growth
Creators
- 1. Laboratoire de Physique des Gaz et des Plasmas (LPGP), Unité Mixte de Recherche 8578 CNRS, Université Paris-Sud, Université Paris-Saclay, F-91405 Orsay (France)
- 2. Division of Intelligent Mechanical Systems, Graduate School of System Design, Tokyo Metropolitan University, 191-0065 Tokyo (Japan)
- 3. Plasma and Coatings Physics Division, IFM Materials Physics, Linköping University, SE-581 83 Linköping (Sweden)
- 4. Instituto de Física 'Gleb Wataghin' (IFGW), Universidade Estadual de Campinas, 13083-970 Campinas (Brazil)
Description
High power impulse magnetron sputtering (HiPIMS) has already demonstrated great potential for synthesizing the high-energy crystalline phase of titanium dioxide (rutile TiO2) due to large quantities of highly energetic ions present in the discharge. In this work, it is shown that the metastable anatase phase can also be obtained by HiPIMS. The required deposition conditions have been identified by systematically studying the phase formation, microstructure and chemical composition as a function of mode of target operation as well as of substrate temperature, working pressure, and peak current density. It is found that films deposited in the metal and transition modes are predominantly amorphous and contain substoichiometric TiOx compounds, while in compound mode they are well-crystallized and present only O2− ions bound to Ti4+, i.e. pure TiO2. Anatase TiO2 films are obtained for working pressures between 1 and 2 Pa, a peak current density of ∼1 A cm−2 and deposition temperatures lower than 300 °C. Rutile is favored at lower pressures (<1 Pa) and higher peak current densities (>2 A cm−2), while amorphous films are obtained at higher pressures (5 Pa). Microstructural characterization of selected films is also presented. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-6463/aac080Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 51
- Journal Issue
- 23
- Journal Page Range
- [10 p.]
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 53008188
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S74: ATOMIC AND MOLECULAR PHYSICS;
- Descriptors DEI
- CHEMICAL COMPOSITION; CURRENT DENSITY; IRRADIATION; MAGNETRONS; METALS; MICROSTRUCTURE; OXYGEN IONS; SUBSTOICHIOMETRY; SUBSTRATES; TAIL IONS; THIN FILMS; TITANIUM IONS; TITANIUM OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; FILMS; IONS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; OXIDES; OXYGEN COMPOUNDS; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS