Published 1990
| Version v1
Journal article
Distribution of faults in implanted silicon studied by ultrasoft X-ray reflectometry
- 1. Leningradskij Gosudarstvennyj Univ., Leningrad (USSR)
Description
P-type silicon irradiated by E=100 keV energy phosphorus ions with Φ=6x1015 cm-2 dose is investigated according to spectral dependences of reflection coefficient within ionization 3-threshold within SiL2 region. Layer-by-layer etching was conducted to determine distribution of radiation defects according to specimen depth. As a result is was detected, that these regions which were spatially divided and complicated by different type defects
Additional details
Additional titles
- Original title (Russian)
- Исследование распределения нарушения в имплантированном кремнии методом ультрамягкой рентгеновской рефлектометрии
Publishing Information
- Journal Title
- Fizika i Tekhnika Poluprovodnikov
- Journal Volume
- 24
- Journal Issue
- 7
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 1216-1221
- ISSN
- 0015-3222
- CODEN
- FTPPA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 22057327
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CRYSTAL DEFECTS; DEPTH; FINE STRUCTURE; ION IMPLANTATION; KEV RANGE 10-100; MONOCRYSTALS; P-TYPE CONDUCTORS; PHOSPHORUS IONS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; SILICON; X-RAY SPECTRA; X-RAY SPECTROSCOPY
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; CRYSTAL STRUCTURE; CRYSTALS; DIMENSIONS; ELEMENTS; ENERGY RANGE; IONS; KEV RANGE; MATERIALS; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SEMIMETALS; SPECTRA; SPECTROSCOPY