Published December 1, 2017 | Version v1
Journal article

The effect of different annealing temperatures on the structure and luminescence properties of Y2O3:Bi3+ thin film fabricated by RF magnetron sputtering

  • 1. Department of Physics, Faculty of Education, University of Khartoum, P.O. Box 321, 11115 Omdurman (Sudan)
  • 2. Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein, ZA 9300 (South Africa)
  • 3. Photovoltaic Laboratory, Centre for Energy Studies, Indian Institute of Technology Delhi, New Delhi 110016 (India)

Description

Highlights: • Y2O3:Bi3+ phosphor powder was synthesized with the sol gel method. • Y2O3:Bi3+ thin films were successfully fabricated by the RF magnetron sputtering. • Orientations of these films were depended on the post annealing temperature. • PL showed a variation in the emission bands position. - Abstract: Y2O3:Bi3+ thin films have been fabricated onto Si substrates by the radio frequency magnetron sputtering technique. The influence of different annealing temperature was studied by X-ray diffraction(XRD), Atomic force microscopy, scanning electron microscopy and Photoluminescence (PL). The XRD study revealed that, the Y2O3:Bi3+ thin films have a cubic phase but the orientation of these films changed with the increase of the annealing temperature. Evolution of the texture coefficient on the film texture had been calculated.The morphological studies showed that the as-prepared film was smooth and uniform but the annealed films showedislands like growth atdifferent placeson the thin films. Intense blue emission was observed from the as-prepared film using a 325 nm He-Cd laser as excitation source. A variation of the PL peak positions as a function of annealing temperature was observed. These results suggest that the increase in annealing temperature hasaffected the thin film's crystal orientation as well as the luminescence properties of these thin films.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2017.01.001

Additional details

Identifiers

DOI
10.1016/j.apsusc.2017.01.001;
PII
S0169-4332(17)30002-8;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
424
Journal Issue
Part 3
Journal Page Range
p. 407-411
ISSN
0169-4332
CODEN
ASUSEE

Conference

Title
11. international conference on physics of advanced materials
Acronym
ICPAM-11
Dates
8-14 Sep 2016
Place
Cluj-Napoca (Romania)

Optional Information

Copyright
Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.