The effect of different annealing temperatures on the structure and luminescence properties of Y2O3:Bi3+ thin film fabricated by RF magnetron sputtering
- 1. Department of Physics, Faculty of Education, University of Khartoum, P.O. Box 321, 11115 Omdurman (Sudan)
- 2. Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein, ZA 9300 (South Africa)
- 3. Photovoltaic Laboratory, Centre for Energy Studies, Indian Institute of Technology Delhi, New Delhi 110016 (India)
Description
Highlights: • Y2O3:Bi3+ phosphor powder was synthesized with the sol gel method. • Y2O3:Bi3+ thin films were successfully fabricated by the RF magnetron sputtering. • Orientations of these films were depended on the post annealing temperature. • PL showed a variation in the emission bands position. - Abstract: Y2O3:Bi3+ thin films have been fabricated onto Si substrates by the radio frequency magnetron sputtering technique. The influence of different annealing temperature was studied by X-ray diffraction(XRD), Atomic force microscopy, scanning electron microscopy and Photoluminescence (PL). The XRD study revealed that, the Y2O3:Bi3+ thin films have a cubic phase but the orientation of these films changed with the increase of the annealing temperature. Evolution of the texture coefficient on the film texture had been calculated.The morphological studies showed that the as-prepared film was smooth and uniform but the annealed films showedislands like growth atdifferent placeson the thin films. Intense blue emission was observed from the as-prepared film using a 325 nm He-Cd laser as excitation source. A variation of the PL peak positions as a function of annealing temperature was observed. These results suggest that the increase in annealing temperature hasaffected the thin film's crystal orientation as well as the luminescence properties of these thin films.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2017.01.001Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2017.01.001;
- PII
- S0169-4332(17)30002-8;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 424
- Journal Issue
- Part 3
- Journal Page Range
- p. 407-411
- ISSN
- 0169-4332
- CODEN
- ASUSEE
Conference
- Title
- 11. international conference on physics of advanced materials
- Acronym
- ICPAM-11
- Dates
- 8-14 Sep 2016
- Place
- Cluj-Napoca (Romania)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 49071530
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; ATOMIC FORCE MICROSCOPY; BISMUTH IONS; LASERS; MAGNETRONS; PHOSPHORS; PHOTOLUMINESCENCE; POWDERS; RADIOWAVE RADIATION; RF SYSTEMS; SCANNING ELECTRON MICROSCOPY; SOL-GEL PROCESS; SPUTTERING; SUBSTRATES; THIN FILMS; X-RAY DIFFRACTION; YTTRIUM OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; COHERENT SCATTERING; DIFFRACTION; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; ELECTRON TUBES; ELECTRONIC EQUIPMENT; EMISSION; EQUIPMENT; FILMS; HEAT TREATMENTS; IONS; LUMINESCENCE; MICROSCOPY; MICROWAVE EQUIPMENT; MICROWAVE TUBES; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; RADIATIONS; SCATTERING; TRANSITION ELEMENT COMPOUNDS; YTTRIUM COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.