Published April 16, 1986
| Version v1
Journal article
Implantation with ion pulses
- 1. Hungarian Academy of Sciences, Budapest. Central Research Inst. for Physics
Description
A description of a repetitive-mode pulsed ion implanter is given. Discussed are mode of operation and implantation results for different source materials (CsCl, PTFE, and SiO2). (author)
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi A
- Journal Volume
- 94
- Journal Issue
- 2
- Series
- Phys. Status Solidi A.
- Journal Page Range
- 855-858
- ISSN
- 0031-8965
- CODEN
- PSSAB
Conference
- Title
- Working meeting on ion implantation in semiconductors and other materials and ion beam devices.
- Dates
- 13-18 Oct 1985.
- Place
- Balatonaliga (Hungary).
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 17066464
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BACKSCATTERING; CESIUM CHLORIDES; HIGH-VOLTAGE PULSE GENERATORS; ION BEAMS; ION IMPLANTATION; ION SOURCES; POLYCRYSTALS; PULSES; RUTHERFORD SCATTERING; SILICON OXIDES; TEFLON
- Descriptors DEC
- ALKALI METAL COMPOUNDS; BEAMS; CESIUM COMPOUNDS; CHALCOGENIDES; CHLORIDES; CHLORINE COMPOUNDS; CRYSTALS; ELASTIC SCATTERING; ELECTRONIC EQUIPMENT; EQUIPMENT; FUNCTION GENERATORS; HALIDES; HALOGEN COMPOUNDS; ORGANIC COMPOUNDS; ORGANIC FLUORINE COMPOUNDS; ORGANIC HALOGEN COMPOUNDS; ORGANIC POLYMERS; OXIDES; OXYGEN COMPOUNDS; POLYETHYLENES; POLYMERS; POLYOLEFINS; PULSE GENERATORS; SCATTERING; SILICON COMPOUNDS