Published May 26, 2014
| Version v1
Journal article
Publisher's Note: "Ultraviolet laser diodes grown on semipolar (202¯1) GaN substrates by plasma-assisted molecular beam epitaxy" [Appl. Phys. Lett. 102, 251101 (2013)]
Creators
- 1. TopGaN Sp. z o.o., Sokolowska 29/37, 01-142 Warsaw (Poland)
- 2. Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw (Poland)
- 3. Leibniz Institute of Crystal Growth, Max-Born Strasse 2, Berlin 12489 (Germany)
- 4. Ammono S.A., Czerwonego Krzyża 2/31, 00-377 Warsaw (Poland)
Description
no abstract available
Additional details
Identifiers
- DOI
- 10.1063/1.4879639;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 104
- Journal Issue
- 21
- Journal Page Range
- p. 219901-219901.1
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46006313
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- GALLIUM NITRIDES; LASER RADIATION; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; PLASMA; SEMICONDUCTOR LASERS; SUBSTRATES; ULTRAVIOLET RADIATION
- Descriptors DEC
- CRYSTAL GROWTH METHODS; ELECTROMAGNETIC RADIATION; EPITAXY; GALLIUM COMPOUNDS; LASERS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SOLID STATE LASERS
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC