Published February 1989
| Version v1
Journal article
Monolithic preamplifier with bipolar SST for silicon strip readout
Creators
- 1. LSI Labs., NIT, 3-1 Morinosato, Atsugi, Kanagawa-ken, 243-01 (Japan)
- 2. National Lab. for High Energy Physics, 1-1 Oho, Tsukuba, Ibaraki-ken, 305 (Japan)
Description
A monolithic preamplifier was designed for a head amplifier of a silicon strip detector. The process technology for fabrication is a super self-aligned bipolar technology developed by LSI laboratories, NTT, Atsugi. The preamplifier is a current sensitive amplifier followed by a filter amplifier and an output buffer. The features of these amplifiers are described
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 36
- Journal Issue
- 1
- Series
- IEEE Trans. Nucl. Sci.
- Journal Page Range
- 502-506
- ISSN
- 0018-9499
- CODEN
- IETNA
Conference
- Title
- IEEE nuclear science symposium.
- Dates
- 9-11 Nov 1988.
- Place
- Orlando, FL (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 20057556
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMPLIFIERS; FABRICATION; FILTERS; HIGH ENERGY PHYSICS; RADIATION DETECTORS; SILICON; SPECIFICATIONS
- Descriptors DEC
- ELEMENTS; EQUIPMENT; MEASURING INSTRUMENTS; PHYSICS; SEMIMETALS
Optional Information
- Secondary number(s)
- CONF-881103--.