New methods of fast high power switching with semiconductor devices

This paper demonstrates the possibility of fast high-power switching with dynistors where the carriers are generated by impact ionization in a high power microwave field. Structures with one p-n junction and p-n-p-n type four-layer structures were studied experimentally. Switches are discussed that are diode structures with the p-n junction produced by diffusion of boron and aluminum with surface concentrations N /SUB B/ = 2.1019 cm-3 and N /SUB A1/ = 7.1016 cm-3. The block diagram of the equipment used to study the switches is shown